| PART |
Description |
Maker |
| STH5NA90FI |
3.5 A, 900 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET
|
STMICROELECTRONICS
|
| STP6NB90FP STP6NB90 |
5.8 A, 900 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-CHANNEL 900V - 1.7 OHM - 5.8A - TO-220/TO-220FP POWERMESH MOSFET
|
STMICROELECTRONICS
ST Microelectronics
|
| STW6NC90Z |
5.2 A, 900 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
|
STMICROELECTRONICS
|
| IRFBF20PBF |
1.7 A, 900 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
VISHAY SILICONIX
|
| IXCY01N90E |
900 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA PLASTIC PACKAGE-3
|
IXYS, Corp.
|
| STW11NK90Z |
N-channel 900 V, 0.82 Ohm typ., 9.2 A Zener-protected SuperMESH(TM) Power MOSFET in a TO-247 package
|
ST Microelectronics
|
| TMP93C071 E_030331_93C071_SUMMARY |
16-Bit Microcontroller TLCS-900 Family: 900/L Series
From old datasheet system
|
Toshiba
|
| TMP95FY64 E_030331_95FY64_SUMMARY |
16-Bit Microcontroller TLCS-900 Family: 900/H Series
From old datasheet system
|
Toshiba
|
| 2SK1943-01 |
OSC 5V 8PIN CMOS 5 A, 900 V, 2.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-channel MOS-FET
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
|
| SXL-189-EB |
800-1000 MHz, 50 Ohm power MMIC amplifier. High linearity performance: 42dBm typ. at 900 MHz. Eval board.
|
Stanford Microdevices
|
| 2SK2374 |
Silicon N-Channel Power F-MOS FET 5 A, 900 V, 2.8 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
|
